Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4600-4606

  Angelis, C T ^a   Dimitriadis, C A ^a   Miyasaka, M ^b   Farmakis, F V ^c   Kamarinos, G ^c   Brini, J ^c   Stoemenos, J ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b SEIKO EPSON CORPORATION   (Japan)

^c Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000553102     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371409     Document Type: Article

References (18)

1. T. Voutsas and M. Hatalis, J. Appl. Phys. 76, 777 (1994).
2. K.-Y. Choi and M.-K. Han, J. Appl. Phys. 80, 1883 (1996).
3. T. Sameshima and S. Usui, Appl. Phys. Lett. 59, 2724 (1991).
4. M. Cao, S. Talwar, K. J. Kramer, T. W. Sigmon, and K. C. Saraswat, IEEE Trans. Electron Devices 43, 56 (1990).
5. D. K. Fork, G. B. Anderson, J. B. Boyce, R. I. Johnson, and P. Mei, Appl. Phys. Lett. 68, 2138 (1996).
6. H. Kuriyama et al. Jpn. J. Appl. Phys., Part 1 30, 3700 (1991).
7. T. W. Little, K.-I. Takahara, H. Koike, T. Nakazawa, I. Yudasaka, and H. Ohshida, Jpn. J. Appl. Phys., Part 1 30, 3724 (1991).
8. R. Carluccio, J. Stoemenos, G. Fortunato, D. B. Meakin, and M. Bianconi, Appl. Phys. Lett. 66, 1394 (1995).
9. L. Haji, P. Joubert, J. Stoemenos, and N. A. Economou, J. Appl. Phys. 75, 3944 (1994).
10. B. Faughnan and A. C. Ipri, IEEE Trans. Electron Devices 36, 101 (1989).
11. C. T. Angelis, C. A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V. K. Gueorguiev and Tz. E. Ivanov, IEEE Trans. Electron Devices 46, 968 (1999).
12. N. Matsuo and A. Sasaki, Solid-State Electron. 39, 337 (1996).
13. M. Grunewald, P. Thomas, and D. Wurtz, Phys. Status Solidi B 100, 139 (1980).
14. C. A. Dimitriadis, P. A. Coxon, and N. A. Economou, IEEE Trans. Electron Devices 42, 950 (1995).
15. J. W. Seto, J. Appl. Phys. 46, 5247 (1975).
16. O. Jantsch, IEEE Trans. Electron Devices 34, 1100 (1987).
17. W. B. Jackson, N. M. Johnson, and D. K. Biegelsen, Appl. Phys. Lett. 43, 195 (1983).
18. B. Faughnan, Appl. Phys. Lett. 50, 290 (1987).