Modeling of the reverse characteristics of a-Si:H TFTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 812-819

  Servati, Peyman ^a,b   Nathan, Arokia ^a,b  

^a IEEE   (Canada)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous semiconductors; Leakage currents; Thin film transistors

Indexed keywords

AMORPHOUS SEMICONDUCTOR; BACK CHANNEL CONDUCTION; FRONT CHANNEL CONDUCTION; OHMIC CONDUCTION; REVERSE CURRENT VOLTAGE CHARACTERISTICS;

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONS; HYDROGENATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTING SILICON;

THIN FILM TRANSISTORS;

EID: 0036564669     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998589     Document Type: Article

References (16)

1. A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions
2. Mechanisms underlying the off characteristics of a-Si:H thin-film transistors
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12. Correlation between leakage current and overlap capacitance in a-Si:H TFTs
13. Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements
14. A unified model for the space charge limited currents (SCLC) in organic materials combining trapping and field dependent mobility
15. Injection- and space charge limited-currents in doped conducting organic materials