New bottom-gated poly-Si thin-film transistor

IEEE Electron Device Letters

Volumn 20, Issue 4, 1999, Pages 170-172

  Choi, Kwon Young ^a   Park, Kee Chan ^b   Park, Cheol Min ^b   Han, Min Koo ^b  

^a SAMSUNG Electronics   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHARGE CARRIERS; GATES (TRANSISTOR); LASER APPLICATIONS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

SELECTIVE LASER ANNEALING;

THIN FILM TRANSISTORS;

EID: 0032680579     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.753756     Document Type: Article

References (7)

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