Device grade microcrystalline silicon owing to reduced oxygen contamination

Applied Physics Letters

Volumn 69, Issue 10, 1996, Pages 1373-1375

  Torres, P ^a   Meier, J ^a   Fluckiger R ^a   Kroll, U ^a   Anna Selvan, J A ^a   Keppner, H ^a   Shah, A ^a   Littelwood, S D ^b   Kelly, I E ^b   Giannoules P ^c  

^a UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^b BRUNEL UNIVERSITY   (United Kingdom)

^c SAE Elektronik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001625753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117440     Document Type: Article

References (16)

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