Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1221-1224

  Le Ru, Eric C ^a   Howe, Patrick ^a   Jones, Tim S ^a   Murray, Ray ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENGINEERED STRUCTURES; INAS/GAAS QUANTUM DOTS; LOW GROWTH RATE; SEED LAYER; SUBSTRATE TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 27744536001     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303051     Document Type: Conference Paper

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