Relaxation of a strained quantum well at a cleaved surface

Journal of Applied Physics

Volumn 91, Issue 7, 2002, Pages 4171-4176

  Davies, John H ^a   Bruls, D M ^b   Vugs, J W A M ^b   Koenraad, P M ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BUCKLING BEHAVIORS; CLEAVED SURFACES; CONSISTENT VALUES; CONSTANT COMPOSITION; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DIRECT MEASUREMENT; ELASTIC FIELDS; ELASTIC THEORY; GAAS; GROWTH DIRECTIONS; HOMOGENEOUS MEDIUM; INAS; INDIUM ATOMS; INGAAS QUANTUM WELLS; SEMI-CONDUCTOR SURFACES; STRAINED QUANTUM WELLS; STRAINED STRUCTURE;

GALLIUM ARSENIDE; INDIUM ARSENIDE; LATTICE CONSTANTS; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036535988     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1459100     Document Type: Article

References (15)

1. P. G. Piva, R. D. Goldberg, I. V. Mitchell, H. Chen, R. M. Feenstra, G. C. Weatherly, D. W. McComb, G. C. Aers, P. J. Poole, and S. Charbonneau, Appl. Phys. Lett. 72, 1599 (1998). apl APPLAB 0003-6951
2. B. Legrand, B. Grandidier, J. P. Nuys, D. Stiévenard, J. M. Gérard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998). apl APPLAB 0003-6951
3. H. Chen, R. M. Feenstra, R. S. Goldman, C. Silfvenius, and G. Landgren, Appl. Phys. Lett. 72, 1727 (1998). apl APPLAB 0003-6951
4. H. Chen, R. M. Feenstra, P. G. Piva, R. D. Goldberg, I. V. Mitchell, G. C. Aers, P. J. Poole, and S. Charbonneau, Appl. Phys. Lett. 75, 79 (1999). apl APPLAB 0003-6951
5. T. Pinnington, A. Sanderson, T. Tiedje, T. P. Pearsall, E. Kasper, and H. Presting, Thin Solid Films 222, 259 (1992). tsf THSFAP 0040-6090
6. C. D. Akyüz, A. Zaslavsky, L. B. Freund, D. A. Syphers, and T. O. Sedgwick, Appl. Phys. Lett. 72, 1739 (1998). apl APPLAB 0003-6951
7. M. Y. He, J. Lipkin, D. R. Clarke, A. G. Evans, and M. Tenhover, Acta Mater. 44, 2353 (1996). acz ACMAFD 1359-6454
8. S. P. Timoshenko and J. N. Goodier, Theory of Elasticity (McGraw-Hill, New York, 1970), Sec. 148.
9. K. L. Johnson, Contact Mechanics (Cambridge University Press, Cambridge, 1985), Sec. 2.5. Note that Johnson takes the force P inward, while it is outward here to match the measurements.
10. See, for example, E. P. O'Reilly, Semicond. Sci. Technol. 4, 121 (1989). sst SSTEET 0268-1242
11. A. E. Green and W. Zerna, Theoretical Elasticity (Oxford University Press, Oxford, 1968), Chap. 9.
12. C. G. van de Walle, Phys. Rev. B 39, 1871 (1989). prb PRBMDO 0163-1829
13. D. M. Bruls, P. M. Koenraad, M. Hopkinson, J. H. Wolter, and H. W. M. Salemink, Appl. Surf. Sci. (in press).
14. W. Mönch, Semiconductor Surfaces and Interfaces, 3rd ed. (Springer, Heidelberg, 2001), Chap. 7.
15. J. H. Davies, D. E. Petticrew, and A. R. Long, Phys. Rev. B 58, 10789 (1998). prb PRBMDO 0163-1829