Barrier-height and well-width dependence of photoluminescence from AlGaN-based quantum well structures for deep-UV emitters

Materials Science and Engineering: B

Volumn 139, Issue 2-3, 2007, Pages 186-191

  Kajitani, Ryo ^a   Kawasaki, Koji ^a   Takeuchi, Misaichi ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RIKEN   (Japan)

Author keywords

AlGaN; Deep UV emitters; MOCVD; Photoluminescence; QCSE; Quantum well

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CRYSTAL GROWTH; DEFECTS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; STARK EFFECT;

EMISSION ENERGY; EMISSION INTENSITY; ROOM TEMPERATURE; UV EMITTERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34247598898     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.02.006     Document Type: Article

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