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Volumn 19, Issue 1, 2002, Pages 219-222

Critical issues in AlxGa1-xN growth

Author keywords

AlGaN; Epitaxial lateral growth; Heteroepitaxial growth; Low temperature interlayer

Indexed keywords

CRYSTAL DEFECTS; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; STRAIN; TENSILE STRESS;

EID: 0037012292     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00222-1     Document Type: Conference Paper
Times cited : (30)

References (14)
  • 6
    • 0007992135 scopus 로고
    • Doctoral Thesis, Faculty Electric Engineering, Nagoya University, Nagoya
    • (1991)
    • Itoh, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.