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Volumn 19, Issue 1, 2002, Pages 219-222
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Critical issues in AlxGa1-xN growth
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Author keywords
AlGaN; Epitaxial lateral growth; Heteroepitaxial growth; Low temperature interlayer
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Indexed keywords
CRYSTAL DEFECTS;
EPITAXIAL GROWTH;
PHOTOLUMINESCENCE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN;
TENSILE STRESS;
HETEROEPITAXIAL GROWTH;
LOW-TEMPERATURE INTERLAYERS;
OPTICAL MATERIALS;
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EID: 0037012292
PISSN: 09253467
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-3467(01)00222-1 Document Type: Conference Paper |
Times cited : (30)
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References (14)
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