Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 26-36

  Jenichen, Arndt ^a,b   Engler, Cornelia ^b  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

A1. Growth models; A2. Growth from vapor; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

ARSENIC; DENSITY FUNCTIONAL THEORY; DEPOSITION; DIMERS; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

BORON DEPOSITION; GROWTH MODELS; MOLECULAR CLUSTERS; SEMICONDUCTING III-V MATERIALS;

QUANTUM CHEMISTRY;

EID: 34247566065     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.019     Document Type: Article

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