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Volumn 357-358, Issue , 1996, Pages 322-326

Theory of adsorption of Cl2 molecules on GaAs(001) surfaces

Author keywords

Adatoms; Chemisorption; Density functional calculations; Etching; Gallium arsenide; Halogens; Surface chemical reaction

Indexed keywords

CHEMICAL BONDS; CHLORINE; DESORPTION; DISSOCIATION; ETCHING; GEOMETRY; MOLECULES; SEMICONDUCTING GALLIUM ARSENIDE; STABILITY; SURFACES;

EID: 0030169475     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00174-4     Document Type: Article
Times cited : (19)

References (13)
  • 8
    • 0042321258 scopus 로고    scopus 로고
    • note
    • Both the Ga-rich GaAs(001)-(4×2) surface and the As-rich (2×4) surface obey the electron counting rule; all Ga dangling bonds are empty and all As dangling bonds are filled.
  • 9
    • 0000122127 scopus 로고
    • T. Ohno and K. Shiraishi, Phys. Rev. B 42 (1990) 11194; K. Shiraishi, J. Phys. Soc. Jpn. 59 (1990) 3455.
    • (1990) Phys. Rev. B , vol.42 , pp. 11194
    • Ohno, T.1    Shiraishi, K.2
  • 10
    • 0000948663 scopus 로고
    • T. Ohno and K. Shiraishi, Phys. Rev. B 42 (1990) 11194; K. Shiraishi, J. Phys. Soc. Jpn. 59 (1990) 3455.
    • (1990) J. Phys. Soc. Jpn. , vol.59 , pp. 3455
    • Shiraishi, K.1
  • 11
    • 0042321257 scopus 로고    scopus 로고
    • note
    • The resultant surface, where the center Ga dimer is broken with each Ga atom being bonded to one Cl atom, obeys the electron counting rule. In other words, the Ga dangling bonds on the two side Ga dimers remain empty after chlorination of the center Ga dimer.
  • 12
    • 85136554849 scopus 로고    scopus 로고
    • note
    • 2 molecules will always adsorb dissociatively over Ga dimers with no potential barrier.
  • 13
    • 85136552881 scopus 로고    scopus 로고
    • note
    • 2 dissociative adsorption as explained in the text.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.