Optimized growth of BGaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 123-127

  Groenert, M E ^a   Averbeck, R ^a   Hosler W ^b   Schuster, M ^b   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

A1. Growth models; A3. Molecular beam epitaxy; B1. BGaAs

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL LATTICES; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; POSITIVE IONS; QUANTUM WELL LASERS; REACTION KINETICS; SEMICONDUCTING FILMS; SURFACE ROUGHNESS; THERMOCOUPLES; X RAY DIFFRACTION ANALYSIS;

BGAAS; CRYSTAL QUALITY; GROWTH MODELS;

MOLECULAR BEAM EPITAXY;

EID: 1342285521     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.010     Document Type: Article

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