Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 732-738

  Leibiger, G ^a   Krahmer, C ^a   Bauer, J ^a   Herrnberger, H ^b   Gottschalch, V ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b Leibniz Inst F O   (Germany)

Author keywords

A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Bgainas; B1. Inganas; B3. Solar cells

Indexed keywords

BORON COMPOUNDS; CHARGE CARRIERS; CRYSTAL LATTICES; ELLIPSOMETRY; ENERGY GAP; HALL EFFECT; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

BGAINAS; FREE CARRIERS; INGANAS; OPTICAL CONSTANTS;

SOLAR CELLS;

EID: 9944231870     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.088     Document Type: Conference Paper

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