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Volumn 167, Issue 3-4, 1996, Pages 543-556
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Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
COMPUTER SIMULATION;
DECOMPOSITION;
FILM GROWTH;
FINITE ELEMENT METHOD;
IONIZATION;
KINETIC THEORY;
MATHEMATICAL MODELS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
REACTION KINETICS;
SURFACE PHENOMENA;
TRANSPORT PROPERTIES;
ARSINE;
IONIZED DONORS;
LOW CARBON CONTAMINATION;
LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION;
TRIETHYL GALLIUM;
TRIMETHYL GALLIUM;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0030259142
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(96)00277-1 Document Type: Article |
Times cited : (31)
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References (30)
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