Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs

Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 543-556

  Ingle, N K ^a,c   Theodoropoulos, C ^a   Mountziaris, T J ^a   Wexler, R M ^b   Smith, F T J ^b,d  

^a UNIVERSITY AT BUFFALO   (United States)

^b EASTMAN KODAK COMPANY   (United States)

^c University of Minnesota   (United States)

^d Loral Infrared and Imaging Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COMPUTER SIMULATION; DECOMPOSITION; FILM GROWTH; FINITE ELEMENT METHOD; IONIZATION; KINETIC THEORY; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTION KINETICS; SURFACE PHENOMENA; TRANSPORT PROPERTIES;

ARSINE; IONIZED DONORS; LOW CARBON CONTAMINATION; LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; TRIETHYL GALLIUM; TRIMETHYL GALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030259142     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00277-1     Document Type: Article

References (30)

1. F.T.J. Smith, Progr. Solid State Chem. 19 (1989) 111.
2. F.T.J. Smith, MRS Symp. Proc. 204 (1991) 117.
3. N. Kobayashi and T. Makimoto, Jpn, J. Appl. Phys. 24 (1985) L824.
4. T.F. Kuech, E. Veuhoff, T.S. Kuan, V. Deline and R. Potemski, J. Crystal Growth 77 (1986) 257.
5. T.F. Kuech, Mater. Sci. Rep. 2 (1987) 1.
6. T.F. Kuech and R. Potemski, Appl. Phys. Lett. 47 (1985) 821.
7. K. Kimura, S. Takagishi, S. Horiguchi, K. Kamon, M. Mihara and M. Ishii, Jpn. J. Appl. Phys. 25 (1986) 1393.
8. K.F. Jensen, J. Crystal Growth 98 (1989) 148.
9. K.F. Jensen, D.I. Fotiadis and T.J. Mountziaris, J. Crystal Growth 107 (1991) 1.
10. M.C. Paputa and S.J.W. Price, Can. J. Chem. 57 (1979) 3178.
11. P.W. Lee, T.R. Omstead, D.R. McKenna and K.F. Jensen, J. Crystal Growth 85 (1987) 165.
12. M. Yoshida, H. Watanabe and F. Uesugi, J. Electrochem. Soc. 132 (1985) 677.
13. T.J. Mountziaris and K.F. Jensen, J. Electrochem. Soc. 138 (1991) 2426.
14. M.G. Jacko and S.J.W. Price, Can. J. Chem. 41 (1963) 1560.
15. V.M. Donnelly and A. Robertson, Surf. Sci. 293 (1993) 93.
16. R. Lückerath, P. Tommack, A. Hertling, H.J. Koss, P. Balk, K.F. Jensen and W. Richter, J. Crystal Growth 93 (1988) 151.
17. W. Hack, R. Haubold, C. Heinrich-Sterzel, H. Keller-Rudek, U. Ohms-Bredemann, D. Schiöberg and C. Strametz, Nitrogen, in: Gmelin Handbook of Inorganic and Organometallic Chemistry, 8th ed., Suppl. Vol. B1 (Springer, Berlin, 1993).
18. W. Tsang and R.F. Hampson, J. Phys. Chem. Ref. Data 15 (1986) 1087.
19. V.N. Kondratiev, Rate Constants of Gas-Phase Reactions (Natl. Bureau Std., Washington, DC, 1972).
20. C. Theodoropoulos, N.K. Ingle, T.J. Mountziaris, Z. Chen, P.L. Liu, G. Kioseoglou and A. Petrou, J. Electrochem. Soc. 142 (1995) 2086.
21. J.C. Balair, Jr., H.J. Emeleus, Sir R. Nyholm and A.F. Trotman-Dickenson, Eds., Comprehensive Inorganic Chemistry (Pergamon, New York, 1973).
22. V.M. Donnelly, J.A. McCaulley and R.J. Shul, MRS Symp. Proc. 204 (1991) 15.
23. J.R. Arthur, Surf. Sci. 43 (1974) 449.
24. V.M. Donnelly, J.A. McCaulley and R.J. Shul, J. Vac. Sci. Technol. A 9 (1991) 2872.
25. H. Lüth and R. Matz, Phys. Rev. Lett. 46 (1981) 1652.
26. T.J. Mountziaris, S. Kalyanasundaram and N.K. Ingle, J. Crystal Growth 131 (1993) 283.
27. N.K. Ingle and T.J. Mountziaris, J. Fluid Mech. 277 (1994) 249; 316 (1996) 373.
28. N.K. Ingle and T.J. Mountziaris, J. Fluid Mech. 277 (1994) 249; 316 (1996) 373.
29. R.C. Reid, J.M. Prausnitz, and T.K. Sherwood, The Properties of Gases and Liquids, 3rd ed. (McGraw-Hill, New York, 1977).
30. N.K. Ingle, PhD Thesis, SUNY at Buffalo, Buffalo, New York, 1995.