Ga-As dimer structure for the GaAs(0 0 1)- c(4 × 4) surface

Surface Science

Volumn 566-568, Issue 1-3 PART 1, 2004, Pages 58-62

  Ohtake, Akihiro ^a   Nakamura, Jun ^b   Koguchi, Nobuyuki ^a   Natori, Akiko ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

Gallium arsenide; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; HIGH ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; MICROCOMPUTERS; MOLECULAR BEAMS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ATOMIC STRUCTURES; ELECTRON ENERGY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); TUNNELING CURRENT;

SURFACE STRUCTURE;

EID: 4544342518     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.022     Document Type: Conference Paper

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