Atomic structure of the GaAs (001) - C(4 × 4) surface: First-principles evidence for diversity of heterodimer motifs

Physical Review Letters

Volumn 93, Issue 14, 2004, Pages

  Penev, E ^a,b   Kratzer, P ^a   Scheffler, M ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b UNIVERSITY OF BASEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CRYSTAL GROWTH; DIMERS; ENTROPY; FREE ENERGY; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; THERMODYNAMIC PROPERTIES;

CONFIGURATIONAL ENTROPY; MOTIFS; SURFACE FREE ENERGY; THERMODYNAMIC ANALYSIS;

CRYSTAL ATOMIC STRUCTURE;

EID: 19644400817     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.146102     Document Type: Article

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