Epitaxial growth of BGaAs and BGaInAs by MOCVD

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 372-376

  Geisz, J F ^a   Friedman, D J ^a   Kurtz, Sarah ^a   Olson, J M ^a   Swartzlander, A B ^a   Reedy, R C ^a   Norman, A G ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SOLUBILITY; THERMODYNAMICS;

THERMODYNAMIC MISCIBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035334337     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00883-1     Document Type: Conference Paper

References (9)