Molecular beam epitaxial growth of BGaAs ternary compounds

Journal of Electronic Materials

Volumn 29, Issue 12, 2000, Pages 1387-1391

  Gupta, V K ^a   Koch, M W ^a   Watkins, N J ^b   Gao, Y ^b   Wicks, G W ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

^b UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SINGLE CRYSTALS; TERNARY SYSTEMS; X RAY CRYSTALLOGRAPHY;

BORON GALLIUM ALLOYS;

BORON COMPOUNDS;

EID: 0034509947     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0123-3     Document Type: Article

References (7)

1. S.M. Ku, J. Electrochem. Soc. 113, 813 (1966).
2. H.M. Manasevit, W.B. Hewitt, A.J. Nelson, and A.R. Mason, J. Electrochem. Soc. 136, 3070 (1989).
3. M.A. Tischler, P.M. Mooney, B.D. Parker, F. Cardone, and M.S. Goorsky, J. Appl. Phys. 71, 984 (1992).
4. W.E. Hoke, P.J. Lemonias, D.G. Weir, and H.T. Hendriks, J. Vac. Sci. Technol. B 11, 902 (1993).
5. S.K. Brierley, H.T. Hendriks, W.E. Hoke, P.J. Lemonias, and D.G. Weir, Appl. Phys. Lett. 63, 812 (1993).
6. V.K. Gupta, C.C. Wamsley, M.W. Koch, and G.W. Wicks, J. Vac. Sci. Technol. B 17, 1246 (1999).
7. G.W. Wicks, III-V Semiconductor Materials in the Handbook of Photonics, ed. Mool C. Gupta (Boca Raton, FL: CRC Press, 1997).