Dose designing and fabrication of 4H-SiC double RESURF MOSFETs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Noborio, M ^a   Suda, J ^a   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC BREAKDOWN; ELECTRONIC STRUCTURE; INTEGRATED CIRCUIT LAYOUT; MICROFABRICATION; SILICON CARBIDE;

DOSE OPTIMIZATION; DRIFT RESISTANCE; FIGURE-OF-MERIT; REDUCED SURFACE FIELD (RESURF);

MOSFET DEVICES;

EID: 34247516100     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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