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Volumn 32, Issue 12, 1996, Pages 1092-1093

Double resurf technology for HVICs

Author keywords

Integrated circuits; Power integrated circuits

Indexed keywords

COMPUTER SIMULATION; COMPUTER SIMULATION LANGUAGES; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRIC WIRING; INTEGRATED CIRCUITS; MOSFET DEVICES; PERFORMANCE; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030572272     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960731     Document Type: Article
Times cited : (33)

References (9)
  • 2
    • 33646920638 scopus 로고
    • A 1200V BiCMOS technology and its applications
    • RUMENNIK, V.: 'A 1200V BiCMOS technology and its applications'. Proc. ISPSD, 1992, pp. 322-327
    • (1992) Proc. ISPSD , pp. 322-327
    • Rumennik, V.1
  • 3
    • 0025556193 scopus 로고
    • A novel field plate structure under high voltage interconnections
    • FUJISHIMA, N., and TAKEDA, H.: 'A novel field plate structure under high voltage interconnections'. Proc. ISPSD, 1990, pp. 91-96
    • (1990) Proc. ISPSD , pp. 91-96
    • Fujishima, N.1    Takeda, H.2
  • 5
    • 0023400798 scopus 로고
    • Field reduction regions for compact high voltage ICs
    • SUGAWARA, Y., and KAMEI, T.: 'Field reduction regions for compact high voltage ICs', IEEE Trans. Electron. Devices, 1987, ED-34, pp. 1816-1821
    • (1987) IEEE Trans. Electron. Devices , vol.ED-34 , pp. 1816-1821
    • Sugawara, Y.1    Kamei, T.2
  • 6
    • 0027543249 scopus 로고
    • Influence of Interconnections onto the breakdown voltage of planar high-voltage p-n junctions
    • FALCK, E., GERLACH, W., and KOREC, J.: 'Influence of Interconnections onto the breakdown voltage of planar high-voltage p-n junctions', IEEE Trans. Electron. Devices, 1993, ED-40, pp. 438-447
    • (1993) IEEE Trans. Electron. Devices , vol.ED-40 , pp. 438-447
    • Falck, E.1    Gerlach, W.2    Korec, J.3
  • 7
    • 0022307936 scopus 로고
    • Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions
    • STENGL, R., and GOSELE, U.: 'Variation of lateral doping - A new concept to avoid high voltage breakdown of planar junctions'. IEDM Tech. Dig., 1985, pp. 154-157
    • (1985) IEDM Tech. Dig. , pp. 154-157
    • Stengl, R.1    Gosele, U.2
  • 9
    • 3242840419 scopus 로고    scopus 로고
    • Technologies Modelling Associates Inc., USA
    • Medici V.2.0.2, Technologies Modelling Associates Inc., USA
    • Medici V.2.0.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.