Development of 10 kV 4H-SiC power DMOSFETs

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1385-1388

  Ryu, Sei Hyung ^a   Agarwal, Anant ^a   Krishnaswami, Sumithra ^a   Richmond, James ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

High voltage; Junction Termination Extension; Multiple zone JTE; Power MOSFET

Indexed keywords

ANNEALING; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SWITCHING SYSTEMS;

HIGH VOLTAGE; JUNCTION TERMINATION EXTENSION (JTE); MULTIPLE ZONE JTE; POWER MOSFETS;

MOSFET DEVICES;

EID: 8744258901     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1385     Document Type: Conference Paper

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