On current limitations in porous SiC applications

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 269-272

  Mynbaeva, M ^a   Lavrent'Ev, A ^a   Kotousova, I ^a   Volkova, A ^a   Mynbaev, K ^a   Lebedev, A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Annealing; Pore modification; Porous SiC; Stoichiometry; Thermal stability

Indexed keywords

ANNEALING; POROUS MATERIALS; STOICHIOMETRY; THERMODYNAMIC STABILITY;

DOUBLE-LAYER POROUS STRUCTURE; PORE MODIFICATION;

SILICON CARBIDE;

EID: 33845654643     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.269     Document Type: Conference Paper

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