Modeling of inversion layer centroid and polysilicon depletion effects on ultrathin-gate-oxide mOSFET behavior: The influence of crystallographic orientation

IEEE Transactions on Electron Devices

Volumn 54, Issue 4, 2007, Pages 723-732

  Rodriguez, Noel ^a   Gámiz, Francisco ^a   Roldán, Juan B ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

CMOS modeling; Gate capacitance; Inversion layer centroid; Numerical simulation; Quantum effects

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DOPING (ADDITIVES); GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; POLYSILICON; QUANTUM THEORY; SCHRODINGER EQUATION; ULTRATHIN FILMS;

GATE CAPACITANCE; INVERSION LAYER CENTROID;

MOSFET DEVICES;

EID: 34147165959     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.891854     Document Type: Article

References (32)

1. J. A. López-Villanueva, P. Cartujo-Cassinello, J. Banqueri, F. Gámiz, and S. Rodríguez, "Effects of the inversion layer centroid on MOSFET behavior," IEEE Trans. Electron Devices, vol. 44, no. 11, pp. 1915-1922, Nov. 1997.
2. J. B. Roldán, F. Gámiz, J. A. López-Villanueva, and J. E. Carceller, "Dependence of the electron mobility on the longitudinal electric field in MOSFETs," Semicond. Sci. Technol., vol. 12, no. 3, pp. 321-330, Mar. 1997.
3. x MOSFET inversion layer centroid modelling," IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2447-2449, Oct. 2001.
4. S. Takagi and A. Toriumi, "Quantitative understanding of inversion layer capacitance in Si MOSFETs," IEEE Trans. Electron Devices, vol. 42, no. 12, pp. 2125-2130, Dec. 1995.
5. M. V. Fischetti and S. E. Laux, "Monte Carlo study of electron transport in inversion layers," Phys. Rev. B, Condens. Matter, vol. 48, no. 4, pp. 2244-2274, Jul. 1993.
6. M. S. Liang, J. Yeol, P. K. Ko, and C. Hu, "Inversion layer capacitance and mobility of very thin gate-oxide MOSFETs," IEEE Trans. Electron Devices, vol. ED-33, no. 3, pp. 409-412, Mar. 1986.
7. Y. Tsividis, Operation and Modelling of the MOS Transistor. New York: Oxford Univ. Press, 1999.
8. N. Arora, R. Rios, and C.-L. Huang, "Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance," IEEE Trans. Electron Devices, vol. 42, no. 5, p. 935, May 1995.
9. P. Habas and S. Selberherr, "On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices. Analytical modeling," Solid State Electron., vol. 33, no. 12, pp. 1539-1544, Dec. 1990.
10. C. L. Huang and N. Arora, "Measurement and modeling of MOSFET I-V characteristics with polysilicon depletion effect," IEEE Trans. Electron Devices, vol. 40, no. 12, pp. 2330-2337, Dec. 1993.
11. OX in implanted polysilicon MOS structures," IEEE Electron Device Lett. vol. 13, no. 1, pp. 2-4, Jan. 1992.
12. S. H. Lo, D. A. Buchanan, and Y. Taur, "Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides," IBM J. Res. Develop., vol. 43, no. 3, pp. 327-337, May 1999.
13. F. Stern and W. E. Howard, "Properties of semiconductor surface inversion layers in the electric quantum limit," Phys. Rev., vol. 163, no. 3, pp. 816-835, Nov. 1967.
14. F. Stern, "Self-consistent results for n-type Si inversion layers," Phys. Rev. B, Condens. Matter, vol. 5, no. 12, pp. 4891-4899, Jun. 1972.
15. A. Rahman, M. S. Lundstrom, and A. W. Ghosh, "Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers," J. Appl. Phys., vol. 97, no. 5, p. 053 702, Mar. 2005. (12 pages).
16. M. Yang, M. Ieong, L. Shi, K. Chan, V. Chan, A. Chou, E. Gusev, K. Jenkins, D. Boyd, Y. Ninomiya, D. Pendleton, Y. Surpris, D. Heenan, J. Ott, K. Guarini, C. D'Emic, M. Cobb, P. Mooney, B. To, N. Rovedo, J. Benedict, R. Mo, and H. Ng, "High performance CMOS fabricated on hybrid substrate with different crystal orientations," in IEDM Tech. Dig. 2003, pp. 453-456.
17. H. Irie, K. Kita, K. Kyuno, and A. Toriumi, "In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110) and (111) Si," in IEDM Tech. Dig. 2004, pp. 225-228.
18. M. Yang, V. W. C. Chan, K. K. Chan, L. Shi, D. M. Fried, J. H. Stathis, A. I. Chou, E. Gusev, J. A. Ott, L. E. Burns, M. V. Fischetti, and M. Ieong, "Hybrid-orientation technology (HOT): Opportunities and challenges," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 965-978, May 2006.
19. A. Vandooren, "Multiple gates and strained films for SOI MOSFETs," in Proc. EUROSOI - 2nd Workshop Thematic Netw. Silicon Insulator Technol., Devices and Circuits, Grenoble, France, Mar. 8-10, 2006, pp. 210-245.
20. Y. Liu, M. Masahara, K. Ishii, T. Sekigawa, H. Takashima, H. Yamauchi, and E. Suzuki, "A highly thershold voltage-controlable 4T FinFET with an 8.5-nm-thick Si-Fin channel," IEEE Electron Device Lett., vol. 25, no. 7, pp. 510-512, Jul. 2004.
21. Y. Liu, K. Ishii, T. Tsutsumi, M. Masahara, and E. Suzuki, "Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching," IEEE Electron Device Lett. vol. 24, no. 7, pp. 484-486, Jul. 2003.
22. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. New York: Cambridge Univ. Press, 1998.
23. F. Gámiz, A. Godoy, J. B. Roldán, J. E. Carceller, and P. Cartujo, "Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs," Semicond. Sci. Technol., vol. 18, no. 11, pp. 927-937, Nov. 2003.
24. F. Gámiz and M. V. Fischetti, "Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate," Appl. Phys. Lett., vol. 83, no. 23, pp. 4849-4851, Dec. 2003.
25. R. Rios and N. Arora, "Determination of ultrathin gate oxide thickness for CMOS structures using quantum effects," in IEDM Tech. Dig., 1994, pp. 613-616.
26. S. Mudanai, L. F. Register, A. F. Tasch, and S. K. Banerjee, "Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs," IEEE Electron Device Lett. vol. 22, no. 3, pp. 145-147, Mar. 2001.
27. A. Haque and M. Z. Kauser, "A comparison of wavefunction penetration effect on gate capacitance in deep submicron n- and p- MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 9, pp. 1580-1587, Sep. 2002.
28. M. M. A. Hakim and A. Haque, "Accurate modeling of gate capacitance in deep submicron MOSFETs with high-k gate dielectrics," Solid State Electron., vol. 48, no. 7, pp. 1095-1100, Jul. 2004.
29. J. A. Lopez-Villanueva, F. Gamiz, I. Melchor, and J. A. Jiménez-Tejada, "Density of states of a two-dimensional electron gas including nonparabolicity," J. Appl. Phys., vol. 75, no. 8, pp. 4267-4269, Apr. 1994.
30. J. A. López-Villanueva, I. Melchor, P. Cartujo, and J. E. Carceller, "Modified Schroedinger equation including nonparabolicity for the study of a two-dimensional electron gas," Phys. Rev. B, Condens. Matter vol. 48, no. 3, pp. 1626-1631, Jul. 1993.
31. H. Watanabe and S. Takagi, "Effects of incomplete ionization impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current," J. Appl. Phys., vol. 90, no. 3, pp. 1600-1607, Aug. 2001.
32. M. Yamaji, K. Taniguchi, and C. Hamaguchi, "Multi-band Monte Carlo method using anisotropic-analytical multi-band method," in Proc. Int. Conf. SISPAD, Tokyo, Japan, Sep. 2-4, 1996, pp. 63-64.