A comparison of wave-function penetration effects on gate capacitance in deep submicron n- and p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1580-1587

  Haque, Anisul ^a,b   Kauser, Mohammad Zahed ^b  

^a IEEE   (Bangladesh)

^b BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Gate capacitance; Inversion layers; MOS device modeling; Quantum effects; Wave function penetration

Indexed keywords

INVERSION CARRIER DENSITY; SCHRODINGER EQUATION; WAVE FUNCTION;

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ERRORS; MOSFET DEVICES; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; VOLTAGE MEASUREMENT;

GATES (TRANSISTOR);

EID: 0036712554     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802633     Document Type: Article

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