Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1600-1607

  Watanabe, Hiroshi ^a   Takagi, Shin Ichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035424177     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1368868     Document Type: Article

References (20)

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