Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1095-1100

  Hakim, M M A ^a   Haque, A ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Gate capacitance modeling; High K gate dielectric; MOS structures; Quantum effects; Wave function penetration

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL OPERATORS; MOS DEVICES; PERMITTIVITY; POISSON EQUATION; QUANTUM THEORY; SILICON;

GATE CAPACITANCE MODELING; HIGH-K GATE DIELECTRICS; MOS STRUCTURES; QUANTUM EFFECTS; WAVE FUNCTION PENETRATION;

MOSFET DEVICES;

EID: 1842865595     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.037     Document Type: Article

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