Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 145-147

  Mudanai, S ^b   Register, L F ^a,b   Tasch, A F ^a,b   Banerjee, S K ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

C V; High K dielectrics; Quantum effects; Wave function penetration

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); NUMERICAL ANALYSIS; POISSON EQUATION; WAVEFORM ANALYSIS;

GATE VOLTAGE; SCHRODINGER-POISSON EQUATIONS;

MOSFET DEVICES;

EID: 0035278985     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910624     Document Type: Article

References (8)

1. Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
2. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
3. Quantum mechanical modeling of electron tunneling from the inversion layer of ultra-thin-oxide nMOSFET's
4. Modeling of direct tunneling current through gate dielectric stacks
5. The quantum transmitting boundary method
6. Resonant level lifetime in GaAs/AlGaAs double-barrier structures
7. 2