In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 447-453

  Meduna M ^a   Novak J ^a,b,e   Bauer, G ^b   Holy V ^c   Falub, C V ^d,f   Tsujino, S ^d   Grutzmacher D ^d,g  

^a MASARYK UNIVERSITY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c CHARLES UNIVERSITY   (Czech Republic)

^d PAUL SCHERRER INSTITUTE   (Switzerland)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^f SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^g FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; IN SITU PROCESSING; MOLECULAR BEAM EPITAXY; SILICON; THERMODYNAMIC STABILITY; X RAY SCATTERING;

INTERDIFFUSION COEFFICIENTS; PSEUDOSUBSTRATES; TEMPERATURE DEPENDENCE; X RAY REFLECTIVITY;

INTERDIFFUSION (SOLIDS);

EID: 34047241181     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/026     Document Type: Article

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