Annealing studies of high Ge composition Si/SiGe multilayers

Zeitschrift fur Kristallographie

Volumn 219, Issue 4, 2004, Pages 195-200

  Meduňa, Mojmír ^a   Novák, Jiří ^a,b   Bauer, Günther ^a   Holý, Václav ^b   Falub, Claudiu Valentin ^c   Tsujino, Soichiro ^c   Müller, Elisabeth ^c   Grützmacher, Detlef ^c   Campidelli, Yves ^d   Kermarrec, Olivier ^d   Bensahel, Daniel ^d  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MASARYK UNIVERSITY   (Czech Republic)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d STMICROELECTRONICS   (France)

Author keywords

Annealing; Diffusion; Reflectivity; Si SiGe multiple quantum wells; X ray diffraction

Indexed keywords

GERMANIUM; SILICON;

CONFERENCE PAPER; DIFFUSION; IN SITU ANNEALING X RAY REFLECTIVITY; MEASUREMENT; QUANTUM MECHANICS; THERMOSTABILITY; THICKNESS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY SMALL ANGLE SCATTERING;

EID: 8744292768     PISSN: 00442968     EISSN: None     Source Type: Journal    
DOI: 10.1524/zkri.219.4.195.30440     Document Type: Conference Paper

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