Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1557-1564

  Aubertine, D B ^a   Ozguven, N ^a   McIntyre, P C ^a   Brennan, S ^b  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FAST FOURIER TRANSFORMS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

LATTICE MATCHINGS;

HETEROJUNCTIONS;

EID: 0042011394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589600     Document Type: Article

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