Strain compensated Si/SiGe quantum well and quantum cascade on Si0.5Ge0.5 pseudosubstrate

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 3-4, 2003, Pages 315-320

  Diehl, L ^a   Mentese, S ^a   Muller E ^a   Grutzmacher D ^a   Sigg, H ^a   Fromherz, T ^b   Faist, J ^c   Gennser, U ^d   Campidelli, Y ^e   Kermarrec, O ^e   Bensahel, D ^e  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^d UNIV PARIS SUD   (France)

^e STMICROELECTRONICS   (France)

Author keywords

Intersubband; Photoluminescence; Quantum cascade; Si SiGe molecular beam epitaxy; Strain compensation; Virtual substrate

Indexed keywords

HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; SUBSTRATES;

VIRTUAL SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037371679     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00607-0     Document Type: Conference Paper

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