High temperature investigations of Si/SiGe based cascade structures using x-ray scattering methods

Journal of Physics D: Applied Physics

Volumn 38, Issue 10 A, 2005, Pages

  Meduna M ^a,b   Novak J ^a,b   Falub, C V ^c   Chen, G ^b   Bauer, G ^b   Tsujino, S ^c   Grutzmacher D ^c   Muller E ^c   Campidelli, Y ^d   Kermarrec, O ^d   Bensahel, D ^d   Schell, N ^e  

^a MASARYK UNIVERSITY   (Czech Republic)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c PAUL SCHERRER INSTITUTE   (Switzerland)

^d STMICROELECTRONICS   (France)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY SCATTERING;

SEMICONDUCTOR INDUSTRY; SPECULAR REFLECTIVITY; STRUCTURAL QUALITY; X-RAY REFLECTIVITY;

MULTILAYERS;

EID: 20844441264     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/10A/023     Document Type: Article

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