Strategies to improve optical gain and waveguide loss in strain-compensated SiGe quantum cascade mid-infrared emitters

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1642-1646

  Tsujino, Soichiro ^a,b   Sigg, Hans ^b   Scheinert, Maxi ^b   Grutzmacher D ^b   Faist, Jérôme ^a,c  

^a IEEE   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

Optical gain; Quantum cascade laser; Silicon germanium; Strain compensation; Waveguide loss

Indexed keywords

OPTICAL GAIN; QUANTUM CASCADE LASERS; SILICON GERMANIUM; STRAIN-COMPENSATION; WAVEGUIDE LOSS;

GAIN CONTROL; LIGHT SOURCES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SOLID STATE LASERS;

OPTICAL WAVEGUIDES;

EID: 33845633683     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.884085     Document Type: Article

References (13)

1. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grüzmacher, and E. Müller, "Intersubband electroluminescence from Si-based quantum cascade structures," Science, vol. 290, pp. 2277-2280, 2000.
2. 0.8/Si quantum-cascade structures based on a bound-to-continuum transition," Appl. Phys. Lett., vol. 81, pp. 4700-4702, 2002.
3. R. Kaindl, M. Wurm, K. Reimann, M. Woerner, T. Elsaesser, C. Miesner, K. Brunner, and G. Abstreiter, "Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas," Phys. Rev. Lett., vol. 86, pp. 1122-1125, 2001.
4. J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, "Quantum cascade laser," Science, vol. 264, p. 553, 1994.
5. S. Tsujino, A. Borak, C. Falub, T. Fromherz, L. Diehl, H. Sigg, and D. Grützmacher, "Intra-valence-band mixing in strain-compensated SiGe quantum well," Phys. Rev. B, Condens. Matter, vol. 72, pp. 153315-153318, 2005.
6. A. Borak, S. Tsujino, H. Sigg, C. V. Falub, M. Scheinert, L. Diehl, D. Grützmacher, E. Müller, U. Gennser, Y. Campidelli, O. Kermarrec, D. Bensahel, and J. Faist, "Recent results on the road to a SiGe quantum cascade laser," in Proc. Mater. Res. Symp., vol. 832, 2005, pp. F4.2.1-14,.
7. T. Fromherz, M. Meduna, G. Bauer, C. V. Falub, A. Borak, S. Tsujino, H. Sigg, and D. Grützmacher, "Intersubband absorption of strain-compensated Si1-xGex valence-band quantum wells with 0.7≤ x ≤0.85," J. Appl. Phys, vol. 98, pp. 44501-44507, 2005.
8. M. Giehler, R. Hey, H. Kostial, S. Cronenberg, T. Ohtsuka, L. Schrottke, and H. T. Grahn, "Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density," Appl. Phys. Lett., vol. 82, pp. 671-673, 2003.
9. H. C. Liu, M. Wächter, D. Ban, Z. R. Wasilewski, M. Buchanan, G. C. Aers, J. C. Cao, S. L. Feng, B. S. Williams, and Q. Hu, "Effect of doping concentration on the performance of teraherz quantum-cascade lasers," Appl. Phys. Lett., vol. 87, pp. 141102-141104, 2005.
10. I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, and W. Wegscheider, "Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures," Appl. Phys. Lett., vol. 83, pp. 5371-5373, 2003.
11. S. Tsujino, A. Borak, E. Müller, M. Scheinert, C. V. Falub, H. Sigg, D. Grützmacher, M. Giovannini, and J. Faist, "Interface-roughness- induced broadening of intersubband electroluminescence in p-SiGe and n-GalnAs/AlInAs quantum-cascade structure," Appl. Phys. Lett., vol. 86, pp. 62113-62115, 2005.
12. 0.5 relaxed buffer substrates," Appl. Phys. Lett., vol. 84, pp. 2829-2731, 2004.
13. U. Gennser, M. Scheinert, L. Diehl, S. Tsujino, A. Borak, C. V. Falub, D. Grützmacher, A. Weber, D. K. Maude, Y. Campidelli, O. Kermarrec, and D. Bensahel, "Total-angular momentum conservation during tunneling through semiconductor barriers," Eur. Phys. Lett., vol. 74, pp. 882-885, 2006.