Intersubband quantum cascades in the Si/SiGe material system

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 829-834

  Diehl, L ^a   Dehlinger, G ^a   Sigg, H ^a   Gennser, U ^b   Grutzmacher D ^a   Muller E ^a   Faist, J ^c   Ensslin, K ^d   Sagnes, I ^b   Campidelli, Y ^e   Kermarrec, O ^e   Bensahel, D ^e  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b UNIV PARIS SUD   (France)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^d ETH ZURICH   (Switzerland)

^e STMICROELECTRONICS   (Italy)

Author keywords

Intersubband; Quantum cascade; SiGe

Indexed keywords

ELECTROLUMINESCENCE; HOLE MOBILITY; QUANTUM WELL LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

QUANTUM CASCADE (QC) LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492660     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00214-X     Document Type: Article

References (15)

1. Properties of strained and relaxed silicon germanium