Device enhancement using process-strained-Si for sub-100-nm nMOSFET

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1276-1279

  Wang, Jen Pan ^a   Su, Yan Kuin ^a   Chen, Jone F ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Contact etch stop layer; Mobility; Strain; Sub 100 nm nMOSFET

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); OSCILLATORS (ELECTRONIC); SEMICONDUCTING SILICON; STRAIN; TRANSCONDUCTANCE;

CONTACT ETCH STOP LAYER; DRIVING CURRENT; INVERTER RING OSCILLATOR; PROCESS-INDUCED STRAIN;

MOSFET DEVICES;

EID: 33646072803     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871874     Document Type: Article

References (12)

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