Effect of strain on p-channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Lin, Cha Hsin ^a   Pei, Zingway ^a   Maikap, Siddheswar ^a   Wang, Ching Chiun ^a   Lu, Ching Sen ^a   Lee, Lurng Shehng ^a   Tsai, Ming Jinn ^a   Chan, Yi Jen ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; MOSFET DEVICES; SILICON NITRIDE; STRESS ANALYSIS; THIN FILMS;

ATOMIC COLLISIONS; STRAIN RELAXATION; TENSILE-STRAINED SILICON NITRIDE FILM; THERMAL ANNEALING PROCESS;

MOS DEVICES;

EID: 29744443134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149987     Document Type: Article

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