Mobility enhancement in dual-channel P-MOSFETs

IEEE Transactions on Electron Devices

Volumn 51, Issue 9, 2004, Pages 1424-1431

  Jung, Jongwan ^a   Yu, Shaofeng ^b   Lee, Minjoo L ^c   Hoyt, Judy L ^a   Fitzgerald, Eugene A ^c   Antoniadis, Dimitri A ^a  

^a USA   (United States)

^b IEEE   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL HETEROJUNCTIONS; INVERSION CARRIER AREAL DENSITY; INVERSION MOBILITY; MOBILITY CARRIER DENSITY RELATIONSHIP; MOBILITY ENHANCEMENT; SILICON GERMANIDE; UNIVERSAL MOBILITY; VIRTUAL SUBSTRATE;

ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; HOLE MOBILITY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; SURFACE PHENOMENA;

MOSFET DEVICES;

EID: 4444270645     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.833588     Document Type: Article

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