Mechanically induced strain enhancement of metal-oxide-semiconductor field effect transistors

Journal of Applied Physics

Volumn 94, Issue 6, 2003, Pages 4102-4107

  Haugerud, B M ^a   Bosworth, L A ^a   Belford, R E ^a,b  

^a BRI   (United States)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

STRAIN ENHANCEMENT;

MOSFET DEVICES;

EID: 0141921378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1602562     Document Type: Article

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