Novel schottky barrier strained germanium PMOS

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 84-85

  Peng, C Y ^a   Yuan, F ^a   Lee, M H ^b   Yu, C Y ^a   Maikap, S ^b   Liao, M H ^a   Chang, S T ^c   Liu, C W ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847227314     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. L. Lee, et al., IEDM Tech. Dig., pp. 429-432, 2003.
2. H. Shang, et. al., IEDM Tech. Dig., pp. 157-160, 2004.
3. S. Zhu, et. al., IEEE EDL, vol. 25, pp. 268-270, 2004.
4. A. G. Cullis et. al., J. Vac. Sci. Tech. A, pp. 1924-1931, 1994.
5. S. Takagi et. al., Trans, on Elec. Dev., pp. 494-501, 1998.