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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 952-957

Growth of droplet-free AlGaN buffer layer with +c polarity by molecular beam epitaxy

(6) Takigawa, Shinichi a,b Furuta, Kei a,c Shimizu, Saburo a,c Shen, Xu Qiang a Kitamura, Toshio a Okumura, Hajime a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b PANASONIC CORPORATION (Japan)

c ULVAC INC (Japan)

Author keywords

AlGan; Buffer layer; Droplet; MBE; Polarity

Indexed keywords

APPROXIMATION THEORY; CRYSTALS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PLASMAS; SAPPHIRE; STOICHIOMETRY;

ALGAN; BUFFER LAYER; DROPLET; POLARITY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2442439156 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.952 Document Type: Article

Times cited : (11)

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