Crystalline structure and the role of low-temperature-deposited AlN and GaN on sapphire revealed by x-ray CTR scattering and x-ray reflectivity measurements

Surface Review and Letters

Volumn 10, Issue 2-3, 2003, Pages 537-541

  Takeda, Y ^a   Tabuchi, M ^a   Amano, H ^b   Akasaki, I ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; SAPPHIRE; SCATTERING; X RAY ANALYSIS;

X-RAY CRYSTAL TRUNCATION ROD (CRT) SCATTERING;

CRYSTAL STRUCTURE;

ALUMINUM DERIVATIVE; GALLIUM; NITROGEN DERIVATIVE;

ATOMIC FORCE MICROSCOPY; CONFERENCE PAPER; CRYSTAL STRUCTURE; LOW TEMPERATURE PROCEDURES; MEASUREMENT; RADIATION SCATTERING; TEMPERATURE DEPENDENCE;

EID: 0041413266     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x03004810     Document Type: Conference Paper

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