Characterization of ALN buffer layers on (0 0 0 1)-sapphire substrates

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 282-286

  Le Vaillant, Yves Matthieu ^a   Bisaro, René ^b   Olivier, Jean ^b   Durand, Olivier ^b   Duboz, Jean Yves ^b   Ruffenach Clur, Sandra ^a   Briot, Olivier ^a   Gil, Bernard ^a   Aulombard, Roger Louis ^a  

^a UNIV MONTPELLIER   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

WARREN AVERBACH METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032090910     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00259-0     Document Type: Article

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