Nonalloyed ohmic formation for p-type AlGaN with p-type GaN capping layers using ohmic recessed technique

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 1-3, 2006, Pages

  Lin, Yow Jon ^a  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

Author keywords

AlGaN; GaN; Ohmic contact; Specific contact resistance; Two dimensional hole gas

Indexed keywords

FABRICATION; GALLIUM NITRIDE; GROWTH (MATERIALS); HOLE MOBILITY; OHMIC CONTACTS; POLARIZATION;

ALGAN; POLARIZATION FIELDS; SPECIFIC CONTACT RESISTANCES; TWO-DIMENSIONAL HOLE GASES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 32044436985     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L86     Document Type: Article

References (20)

1. M. A. Khan, M. Shatalov, H. P. Maruska, H. M. Wang and E. Kuokstis: Jpn. J. Appl. Phys. 44 (2005) 7191.
2. M. Osiński: Gallium-Nitride-Based Technologies (SPIE, Bellingham, WA, 2002).
3. J. Zhang, X. Hu, A. Lunev, J. Deng, Y. Bilenko, T. M. Katona, M. S. Shur, R. Gaska and M. A. Khan: Jpn. J. Appl. Phys. 44 (2005) 7250.
4. S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren: J. Appl. Phys. 86 (1999) 1.
5. H. Morkoç: Nitride Semiconductors and Devices (Springer, Berlin, 1999).
6. S. Nakamura and S. F. Chichibu: Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes (Taylor & Francis, London, 2000).
7. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 86 (2005) 173504.
8. B. A. Hull, S. E. Mohney, U. Chowdhury and R. D. Dupuis: J. Appl. Phys. 96 (2004) 7325.
9. B. H. Jun, H. Hirayama and Y. Aoyagi: Jpn. J. Appl. Phys. 41 (2002) 581.
10. B. A. Hull, S. E. Mohney, U. Chowdhury, R. D. Dupuis, D. Gotthold, R. Birkhahn and M. Pophristic: Mater. Res. Soc. Symp. Proc. 743 (2003) 12.2.1.
11. T. V. Blank, Y. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin and A. E. Cherenkov: Semiconductors 35 (2001) 529.
12. Th. Gessmann, J. W. Graff, Y. L. Li, E. L. Waldron and E. F. Schubert: J. Appl. Phys. 92 (2002) 3740.
13. Th. Gessmann, Y. L. Li, E. L. Waldron, J. W. Graff, E. F. Schubert and J. K. Sheu: J. Electron. Mater. 31 (2002) 416.
14. K. Kumakura, T. Makimoto and N. Kobayashi: Jpn. J. Appl. Phys. 42 (2003) 2254.
15. K. H. Kim, Z. Y. Fan, M. L. Nakarmi, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 85 (2004) 4777.
16. Y. J. Lin: J. Vac. Sci. Technol. B 23 (2005) 48.
17. D. K. Schroder: Semiconductor Material and Device Characterization (John Wiley & Sons, New York, 1998) 2nd ed., p. 157.
18. Y. J. Lin: Appl. Phys. Lett. 86 (2005) 122109.
19. Y. J. Lin and Y. L. Chu: J. Appl. Phys. 97 (2005) 104904.
20. X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul and L. Zhang: J. Vac. Sci. Technol. A 18 (2000) 1144.