Effect of AlN buffer layer deposition conditions on the properties of GaN layer

Journal of Crystal Growth

Volumn 205, Issue 1, 1999, Pages 20-24

  Ito, Takahiro ^a   Ohtsuka, Kohji ^b   Kuwahara, Kazuhiro ^a   Sumiya, Masatomo ^a   Takano, Yasushi ^a   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; HIGH TEMPERATURE PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

ALUMINUM NITRIDE BUFFER LAYER DEPOSITION; GALLIUM CRYSTALLOGRAPHIC FACE; HIGH TEMPERATURE GALLIUM NITRIDE LAYERS; POLARITY; TRIMETHYL ALUMINUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032598214     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00241-9     Document Type: Article

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