Aluminum incorporation control in AlGaN MOVPE: Experimental and modeling study

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 420-425

  Kondratyev, A V ^a   Talalaev, R A ^b,d   Lundin, W V ^c   Sakharov, A V ^c   Tsatsul'nikov, A V ^c   Zavarin, E E ^c   Fomin, A V ^c   Sizov, D S ^c  

^a SOFT IMPACT LTD   (Russian Federation)

^b Semiconductor Technology Research GmbH   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

^d NONE   (Germany)

Author keywords

A1. AIN nano particles; A1. Computer simulation; A1. Planetary reactor; A3. Metalorganic vapor phase epitaxy; B1. AlGaN; B1. Nitrides

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; COMPOSITION; COMPUTER SIMULATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES;

ALN NANO-PARTICLES; FLOW DYNAMICS; PLANETARY REACTORS;

GALLIUM NITRIDE;

EID: 9944260269     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.016     Document Type: Conference Paper

References (5)

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5. W.V. Lundin, A.V. Sakharov, A.F. Tsatsul'nikov, E.E. Zavarin, A.I. Besulkin, A.V. Fomin, D.S. Sizov, MOCVD growth of AlGaN epilayers and AlGaN/GaN SLS in a wide composition range, in: M.S. Shur, A. Zukauskas (Eds.), UV Solid-State Light Emitters and Detectors, Kluwer Academic Publishers, Dordrecht, 2004, pp. 224-231.