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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 671-674

Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiC

(6) Konovalov, V V a Zvanut, M E a Tsvetkov, V F b Jenny, J R b Muller St G b Hobgood, H McD b

a UNIVERSITY OF ALABAMA AT BIRMINGHAM (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

4H SiC; Carbon vacancy; EPR; Intrinsic defect

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRON IRRADIATION; EPITAXIAL GROWTH; PARAMAGNETIC RESONANCE;

CARBON VACANCY; INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 0035675982 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00789-X Document Type: Article

Times cited : (5)

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