Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Mitchel, W C ^a   Mitchell, W D ^a   Fang, Z Q ^b   Look, D C ^b   Smith, S R ^c   Smith, H E ^c   Khlebnikov, Igor ^d   Khlebnikov, Y I ^d   Basceri, C ^d   Balkas, C ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c UNIVERSITY OF DAYTON   (United States)

^d Intrinsic Semiconductor Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTIES; LAW TEMPERATURE PHOTOLUMINESCENCE (LTPL); OPTICAL ADMITTANCE SPECTROSCOPY (OAS); THERMALLY STIMULATED CURRENT (TSC);

ACTIVATION ENERGY; DOPING (ADDITIVES); ELECTRIC INSULATION; HALL EFFECT; LOW TEMPERATURE PROPERTIES; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY;

SILICON CARBIDE;

EID: 33748350721     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2227622     Document Type: Article

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