Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 151-155

  Carlos, W E ^a   Glaser, E R ^a   Shanabrook, B V ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

EPR; Photoluminescence; Semi insulating; Silicon carbide

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; DEFECTS; ENERGY GAP; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; HYDROGEN; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; SILICON WAFERS; THERMAL CONDUCTIVITY;

PHYSICAL VAPOR TRANSPORT (PVT) METHOD; SEMI-INSULATING;

SILICON CARBIDE;

EID: 0347764790     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.048     Document Type: Conference Paper

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