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Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 517-522

Deep level point defects in semi-insulating SiC

(5) Zvanut, Mary Ellen a Lee, Wonwoo a Wang, Haiyan a Mitchel, W C b Mitchell, W D b

a UNIVERSITY OF ALABAMA AT BIRMINGHAM (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

Carbon vacancy; Defect level; Point defects; Semi insulating SiC; Vanadium

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; HALL EFFECT; PARAMAGNETIC RESONANCE; POINT DEFECTS; VANADIUM;

CARBON VACANCY; INTRINSIC DEFECTS; PHOTOINDUCED ELECTRON;

SILICON CARBIDE;

EID: 33947311784 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.517 Document Type: Conference Paper

Times cited : (7)

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