A new physics based dynamic electro thermal large signal model for RF LDMOS FETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 39-42

  Versleijen, M P J G ^a   Bloem, V J ^a   Van Steenwijk, J A ^a   Yanson, O I ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

FETs; Microwave power FETs; Microwave technology; Modeling; MOSFETs; Semiconductor device modeling

Indexed keywords

MICROWAVE POWER FETS; MICROWAVE TECHNOLOGY; PARAMETER EXTRACTION; SEMICONDUCTOR DEVICE MODELING;

ELECTRIC NETWORK ANALYSIS; MATHEMATICAL MODELS; MICROWAVES; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL PROCESSING; SILICON WAFERS;

MOSFET DEVICES;

EID: 4444280545     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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5. th ARMMS conf., Sept, 1999.
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8. O. Tornblad and C. Blaire, "An electrothermal BSIM3 model for large-signal operation of RF power LDMOS devices," 2002 IEEE MTT-S Techn. Digest, pp. 861-864
9. http://www.semiconductors.philips.com/Philips models/