Electrothermal characteristics of strained-Si MOSFETs in high-current operation

IEEE Transactions on Electron Devices

Volumn 51, Issue 11, 2004, Pages 1928-1931

  Choi, Chang Hoon ^a   Chun, Jung Hoon ^a   Dutton, Robert W ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTROSTATICS; IMPACT IONIZATION; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THERMAL CONDUCTIVITY;

BIPOLAR CURRENT GAIN; DEVICE SIMULATION; ELECTROSTATIC DISCHARGE (ESD); ELECTROTHERMAL CHARACTERISTICS; FULLBAND MONTE CARLO SIMULATION; HIGH CURRENT OPERATION; PHONON MEAN FREE PATH; SELF HEATING PROBLEM; SILICON GERMANIUM; STRAINED SILICON MOS;

MOSFET DEVICES;

EID: 8144219880     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.836542     Document Type: Article

References (13)

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